Evaluation of RF and logic performance for 40 nm InAs/InGaAs composite channel HEMTs for high-speed and low-voltage applications

The DC and RF performances of 40 nm high electron mobility transistors (HEMTs) with composite channel of InAs channel and In
_0.53
Ga
_0.47
As sub-channel were demonstrated. The drain current was 870 mA/mm (V
_ds
=0.4V, V
_gs
=0V) and maximum g
_m
was 1750 mS/mm (V
_ds
=0.5V, V
_gs
=-0.65V). The devices showed high current gain cutoff frequency (f
_T
) of 420 GHz and low gate delay time of 0.77 ps owing to the nanometer gate length and extremely high electron mobility of the InAs channel. Under low DC power consumption; these InAs HEMTs still exhibited excellent RF and logic performance which indicates these devices have great potential for future high-speed and low-voltage applications.