24-GHz MMIC development using 0.15-µm GaAs PHEMT process for automotive radar applications

This paper presents 24-GHz monolithic microwave integrated circuit (MMIC) development for automotive radar applications. The chipset consists of a low noise amplifier (LNA), a power amplifier (PA) and a mixer. The LNA exhibits a small signal gain of 20 dB from 19 to 32 GHz with a noise figure of 3 dB. The PA achieves a small signal gain of 20 dB from 19 to 26 GHz with an output P
1dB
of higher than 21 dBm. The mixer exhibits a conversion loss of 9 dB from 20 to 32 GHz with a port-to-port isolation of better than 24 dB.