Study of the electrical behaviour of the IBMCT structure

This paper analyzes the operation mode and the electrical characteristics of the Insulated Base MOS-Controlled Thyristor (IBMCT). The device has two gates for turning the device on and off, and a floating ohmic contact which allows the recombination of the hole excess of the body region with electrons coming from the cathode during the turn-off process. Simulated device characteristics of both basic and shorted anode IBMCT structures are presented, and experimental data are also provided from fabricated 650 V devices.