Monte Carlo simulation of HEMT

Device simulation of HEMT (High Electron Mobility Transistor) has been carried out by ensemble Monte Carlo simulation. Since the electrons in HEMT are confined in GaAs region at the GaAs-AlGaAs hetero-interface, their motion is two-dimensional when the electron energy is low and thus we have to take into account the quantization of electrons at the interface. In order to develop a realistic device simulator of HEMT, we divide the channel region in meshes, and Schrodinger and Poisson equations are solved self-consistently to obtain electronic states of the two-dimensional electrons in a mesh. In addition the real space transfer from GaAs layer into AlGaAs barrier layer is taken into account.