High-frequency characteristics of resonant tunneling diodes

The current and the generation power of resonant tunneling diode versus frequency and applied dc bias voltage are determined from the numerical solution of the time-dependent Schrodinger equation. It is shown that the amplification takes place in the region which is substantially broader then the interval of the negative differential conductance, and the maximum available frequencies essentially exceed values obtained for this region. It is also shown that at various constant voltages on the heterostructure maximum efficiency will be obtained at different frequencies, and even a small deviation from the optimal frequency decreases its value sharply. Influence of impurities of various types on high-frequency characteristics of the structure is investigated. It is shown that impurities with negative potential influence on the efficiency of this device weakly, while the impurities with positive potential suppress this characteristic essentially.