Noise and gain performance of pseudomorphic-HEMT vs temperature for microwave low-noise applications

The high-electron mobility transistors (HEMTs) and their pseudomorphic version (pHEMT) are widely utilized for low-noise applications design due to their inherently low-noise characteristics. In this paper, a careful investigation on the noise and gain performance of a commercial pHEMT series for microwave low-noise applications has been carried out vs. temperature.