Strained MQW-BH-LDs and integrated devices fabricated by selective MOVPE

Selective MOVPE growth is one of the best candidates for achieving integrated MQW waveguide devices, such as DFB laser diode (LD)/electro-absorption (EA) modulator integrated light sources, tunable DBR-LD arrays, DFB-LD/Mach-Zehnder modulator integrated devices and so on. This is because the in-plane bandgap of selectively grown MQW structures can be controlled simply by changing the dielectric mask geometry. Furthermore, direct waveguide formation without a semiconductor etching process can be easily achieved by this technique. The result is highly uniform device characteristics. Recently, it has become to be possible to introduce a current blocking structure into a directly formed waveguide structure. As a result, selective MOVPE growth is strongly expected to fabricate LDs for optical subscriber systems that require excellent uniformity and reproducibility form the high performance LDs. In this paper we discuss a selective MOVPE growth technique for integrated MQW devices followed by all selective MOVPE grown strained MQW-BH-LDs and their extremely uniform device characteristics.