Temperature dependences of GaInAsP/InP compressively-strained quantum-wire lasers fabricated by EB lithography and 2-step OMVPE growth

Temperature dependences of 1.5 /spl mu/m wavelength GaInAsP/InP compressively-strained (CS) single-quantum-well lasers with quantum-wire as active region (15-28 nm) were measured and compared with those of quantum-film lasers fabricated on the same wafer. As the result, better lasing properties of the quantum-wire structure lasers over quantum-film lasers were confirmed for the first time at a temperature below 193 K.