Preparation of Cu(In,Al)Se2 thin films by rapid thermal selenization

Thin films of Cu(In,Al)Se
2
were prepared by rapid thermal annealing of pre-deposited elemental precursor films in an inert ambient. The stacking sequence of precursor films may affect the kinetics of phase formation. X-ray diffraction and TEM-EDS analysis indicated that a quaternary film with gradually changed Cu/(In+Al) ratio could be obtained at 600°C using a precursor film with Cu/Al/In/Se stacking sequence.