Optimization of growth conditions for the OMVPE grown InAsP/InP quantum well

We have investigated the optical quality of a InAsP/InP single quantum well with a 40 /spl Aring/ well thickness grown by organo metallic vapor phase epitaxy at various growth conditions such as growth temperature, V/III ratio, and growth rate, using room temperature photoluminescence (PL) and high resolution X-ray diffraction. The full width at half maximum of PL peaks always increases with the increase of As composition regardless of the growth conditions. However, we observe several different behaviors of PL peak broadening depending on the growth conditions. This different behavior is well described as a function of AsH/sub 3/ flow rate. Based upon our results, we suggest that relatively low growth temperature and low V/III ratio are suitable for the growth of high quality InAsP/InP quantum well structure.