Properties of (GaIn)As and InP bulk epitaxial layers. (GaIn)As/InP-heterostructures and pin-detector device structures grown by using the alternative sources ditertiarybutyl-arsine and ditertiarybutyl phosphine

In this work the use of the novel ditertiarybutyl-phosphorous and arsenic precursors for low pressure metalorganic vapor phase epitaxy (LP-MOVPE) application with respect to InP/(GaIn)As-heterostructures and pin-detector device structures has been studied. Layer quality has been investigated by means of optical and scanning electron microscopy, temperature dependent van der Pauw-Hall measurements, temperature dependent luminescence measurements, high resolution double crystal X-ray diffraction, XRD- and PL-mappings, CV-depth profiling and SIMS measurements. The InP/(GaIn)As-multi quantum well heterostructures exhibit narrow XRD-linewidths of both the main reflection peak as well as the superlattice satellite peaks down to the theoretical limit. The n-type background doping-level of the (GaIn)As layers is reduced to 2/spl times/10/sup 15/ cm/sup -3/ for optimized growth conditions. The low temperature luminescence is characterized by intense and narrow exciton transitions (2-3 meV FWHM). A InP/(GaIn)As-layer structure has been processed to planar pin-diode detector structures of 55 /spl mu/m diameter. The devices show dark currents in the range of 1-1.5 nA at a reverse bias of -5 V. The distribution of the I/U-characteristic is homogeneous over the entire processed wafer area. The device yield exceeds 95%.