High tolerance to radiation effects and low noise performance of ACUTE-a complementary bipolar SOI IC technology

The 1/f noise performance of advanced complementary bipolar process from united technologies (ACUTE) is presented as a function of total dose, device geometry, and polarity as well as bias condition during irradiation. ACUTE's noise performance is also compared to noise from devices built on a standard bipolar process. The measured noise spectrum is expressed in terms of Hooge's constant-/spl alpha//sub H/ which normalizes the "noisiness" of the device to its geometry and doping profiles and therefore allows one to compare different structures. The results indicate a significant radiation tolerance and superior low noise of ACUTE process as compared with standard bipolar technology.