GaAs MESFET With a High-Mobility Self-Assembled Planar Nanowire Channel

We demonstrate the first metal-semiconductor field-effect transistor with a self-assembled planar lang110rang GaAs nanowire channel. Well-defined dc output and transfer characteristics have been observed with a subthreshold slope of ~150 mV/dec, maximum g
_m
of 23 mS/mm, and excellent on-current saturation. Bulklike mobility of ~4100 cm
²
/Vmiddots with corresponding electron concentration of 2.3middot10
¹⁷
cm
^-3
is derived by fitting the experimental data using a self-consistent long channel field effect device model.