Simulation study of graphene nanoribbon tunneling transistors including edge roughness effects

Atomistic tight-binding real space and mode space models are used to investigate the key design parameters of graphene nanoribbon tunneling transistors. For an ideal N
_A
= 12 nanoribbon FET, a 1890 muA/mum ON current and an ON/OFF current ratio in excess of 10
⁵
can be achieved with V
_DD
= 0.4V. The effect of edge roughness is also investigated showing a deterioration of the device performance, in particular in the OFF state, and high device variability.