Effect of rapid thermal annealing on radiation hardening of MOS devices

The influence of RTA (Rapid Thermal Anneal) treatment on MOS radiation hardness is demonstrated and compared with classical furnace treatment. In the case of the RTA, the oxide trapped charge is found to depend on: (i) the anneal temperature as expected. Data are in good agreement with a recently developed model of oxygen out-diffusion, (ii) the location across the wafer with a radial dependence. Results could be related to stress induced by thermal gradient.