Photoluminescence, Raman, and infrared diagnosis of GaAs-AlGaAs superlattices for intersubband infrared detection

We present optical diagnosis of GaAs-AlGaAs superlattices grown by molecular beam epitaxy for use as 8-20 /spl mu/m infrared detectors, that combines photoluminescence, Raman, and Fourier transform infrared spectroscopies. Various structural and physical parameters were obtained by theoretical analysis of the optical results. The use of multiple optical techniques offers comprehensive characterization and further understanding of the physics of long wavelength infrared detectors.