Recent progress in GaN/SiC LEDs and photopumped lasers

Stimulated emission from optically pumped GaN layers grown on SiC has been reported over a wide temperature range of 77 to 450 K. However, there has been no report of photopumped lasing in a DH structure grown on SiC. This presentation will discuss recent progress in the development of GaN-based blue LEDs at Cree and photopumped lasing results obtained on GaN-AlGaN DH laser structures fabricated on SiC.