30 W VHF 6H-SiC power static induction transistor

6H-SiC Static Induction Transistors (SITs) have been demonstrated, using SiC specific semiconductor processing technologies such as, VPE, reactive ion etching and self aligned sidewall Schottky gates. Under test conditions, 6H-SiC SITs developed 38 W of output power at 175 MHz, a power added efficiency of 60%, and an associated gain of 10 dB. The maximum channel current was 300 mA/cm, and the maximum blocking voltage was 200 V.