A brief analysis of the field effect diode and breakdown transistor

The carrier densities of a field effect diode are calculated for the limit of a thin intrinsic silicon layer. The resulting current-voltage relation and the application of this device as a transistor are discussed. In forward bias, carrier densities can be modulated without the complications of the hot-electron effects present in regular field effect transistors. In reverse bias, it can be utilized as a transistor in which the breakdown voltage is modulated by the gate voltages.