Resistive Memory Sensing Using Delta-Sigma Modulation

The design of four resistive memory sensing circuit topologies employing delta-sigma (DeltaSigma) modulation are presented. Operation of the designs and a comparison between simulations and experimentation is given. The designs were fabricated in a 500 nm CMOS process. Measured results indicate that the resistive values ranging from a chosen reference resistance to several hundred kOmega can be sensed reliably.