In-Situ Silicon Integrated Tuner for Automated On-Wafer MMW Noise Parameters Extraction using Multi-Impedance Method for Transistor Characterization

In this paper, for the first time, silicon integrated tuner is presented aiming silicon transistor (HBT, MOSFET) millimeter wave (MMW) noise parameters (NF_min, Rn, Gammaopt) extraction through multi-impedance method. This tuner is directly integrated in on-wafer tested transistor test structure. Design, electrical simulation and MMW measurement of the Tuner are described showing capability from 60 GHz up to 110 GHz for CMOS and BiCMOS sub 65 nm technologies characterization. |Gamma| of 0.88 have been achieved at the DUT input in the considered frequency range and tuner insertion losses are less than 20 dB.