Simultaneous measurements of (Q-V, C-V) and (Q-t, C-t) characteristics in an MFS capacitor with ferroelectric VDF-TrFE copolymer as a gate dielectric

A metal-ferroelectrics-semiconductor (MFS) capacitor with a ferroelectric polymer as a gate dielectric has recently attracted much interest owing to its potential applications in nonvolatile memory. In order to understand switching dynamics, we performed simultaneous measurements of the charge Q and the capacitance C for Au/vinylidene fluoride- trifluoroethylene (VDF-TrFE) /n-Si structure using a double- frequency voltage consisting of a low-frequency high voltage and a high-frequency sinusoidal low voltage.