Study of radiation effects on PIN photodiodes with deep-trap levels using computer modeling

In the present work, a complete numerical analysis of the influence of deep-trap levels on the dark current of silicon PIN photodiodes under 1 MeV neutron radiation was done. Results corroborate that energy levels near the mid-gap affect to a great extent the dark current. Radiation tolerances of undoped and gold-doped devices were compared through simulations. It has been concluded that gold in silicon reduces the neutron-induced damage. Finally, a model to calculate the dark current of irradiated devices doped with deep-impurities is presented.