Characterization of the transient behavior of a GaAs MESFET using dynamic I-V and S-parameter measurements

Dynamic I-V and S-parameter characterization of a medium-power MESFET is presented. In particular, this paper presents an innovative fully automated six-port network analyzer (SPNA) operated in pulse conditions. The results reveal the transient behavior of the GaAs MESFET under pulse conditions which may be attributed to self-heating and/or trap-related anomalies. Furthermore, using standard procedure, these S-parameters could readily be used to extract the dynamic electrical model elements (C/sub gs/, C/sub gd/, G/sub ds/, G/sub m/, etc.) of the MESFET. This system is particularly suitable for studying trap-related phenomena and self-heating effects in GaAs devices and for large-signal/power characterization.