Enhancement-mode 130 nm InAs p-HEMTs having fT of 403 GHz and fmax of 470 GHz fabricated using atomic-layer-etching technology

High-performance 130 nm E-mode InAs p-HEMTs is fabricated using the Ne-based ALET and the buried Pt gate technology. Results from the combination of the improved gate-to-channel aspect ratio achieved by the buried Pt gate technology show that performance of the device is remarkable and the improved carrier transport property is achieved using the ALET technology.