Effective Carrier Mobility Extraction Based on RF Modeling for Highly Leaky MOSFET Devices with Short Channel Length and Small Area

In this paper, a novel method for effective mobility extraction of the advanced MOSFET devices using RF modeling scheme is proposed. The proposed method is robust to high gate leakage current and parasitic source/drain resistance. Also, this method can substantially reduce error from drain bias mismatch between channel conductance and gate-to-channel capacitance measurement, uses only single device, and is applicable to small-area devices. nMOSFET with HfSiON gate dielectric and TiN gate electrode is demonstrated with the proposed method.