GaN/AlN Axial Multi Quantum Well Nanowires for Optoelectronic Devices

III-nitride based quantum wells (QWs) have been extensively studied as active buildings blocks for different electronic and optoelectronic devices. Several samples of GaN/AlN axial multi quantum well nanowires (MQW NWs) have been synthesized, leading to NWs with a MQW structure with GaN wells of different widths along the growth axis, 1.5, 2, 3 and 4 nm. In this work structural and optical properties are studied by means of high resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) analysis respectively.