Edge passivation and related electrical stability in silicon power devices

Factors governing long-term stability of silicon power devices are discussed with particular reference to a major failure mechanism observed in a thyristor device. The device failure was due to electrical instability during an electrical and thermal stability storage test, wherein it was observed that the reverse blocking voltage deteriorated under applied bias at the rated maximum junction temperature. The major cause of this failure was identified as lack of exhaust during the edge passivation and curing process due to which excessive chemical deposits are retained in the bevel region of the silicon element. This contributes to surface leakage current and, hence, a rapid degradation of the off-state characteristics. An orthogonal array experiment was employed to optimize the process factors and levels. The manufacturing process was then modified by incorporating an effective exhaust system in the passivant curing oven. This resulted in marked improvements in the electrical stability and manufacturing yield of this device.<
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