Transport-based dopant metrology in advanced FinFETs

Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. Through correlation of experimental data with multimillion atom simulations in NEMO 3-D, we can identify the impurity's chemical species and determine their concentration, local electric field and depth below the Si/SiO
₂
interface. The ability to model the excited states rather than just the ground states is the critical need. We therefore demonstrate a new approach to atomistic impurity metrology and confirm the assumption of tunneling through individual impurity quantum states.