High performance Cu interconnects with damage-less full molecular-pore-stack (MPS) SiOCH for 32nm-node LSIs and beyond

Damage-less full molecular-pore-stack SiOCH (MPS) / Cu interconnect is developed to reduce effective k-value (k
_eff
). MPS with high endurance against plasma processes is introduced into both via and trench dielectrics without hard mask (HM). Low friction slurry and chemical modification of MPS surface by He-plasma treatment suppress defect generation during direct CMP of the MPS surface. The full-MPS interconnect with low-k (k=3.1) cap demonstrates 10% lower inter-line capacitance and 34% lower inter-layer capacitance than the full-SiOCH (k=3.0) interconnect with SiCN-cap (k=4.9). The effective k-value k
_eff
reduces to 2.67 for the damage-less full MPS structure which is applicable to 32 nm LSIs and beyond.