Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism

Highly reliable TaO
_x
ReRAM has been successfully demonstrated. The memory cell shows stable pulse switching with endurance over 10
⁹
cycles, sufficient retention exceeding 10 years at 85degC. TaO
_x
exhibits stable high and low resistance states based on the redox reaction mechanism, confirmed by HX-PES directly for the first time. An 8 kbit 1T1R memory array with a good operating window has been fabricated using the standard 0.18 mum CMOS process.