Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM

A novel fusion memory is proposed as a new paradigm of silicon based memory technology. An O/N/O gate dielectric and a floating body are combined with a FinFET, and the non-volatile memory (NVM) and high speed capacitorless 1T-DRAM are performed in a single transistor. A nitride trap layer is used as an electron storage node for NVM, and hetero-epitaxially grown Si/Si
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Ge
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energy band engineered bulk substrates allow excess hole storage for 1T-DRAM. Highly reliable 1T-DRAM and NVM are demonstrated.