A comprehensive and comparative study of interface and bulk characteristics of nMOSETs with la-incorporated high-k dielectrics

Reported herein is a comprehensive and comparative study on NMOSFETs with HfLaSiON and HfLaON gate dielectric with an equivalent oxide thickness (EOT) of 0.9 nm (T
_inv~
1.2 nm). Digital and analog performances as well as reliability characteristics are compared in detail. It is shown that HfLaSiON has a strong relationship with the interface characteristics due to low barrier height, while HfLaON with the bulk trap characteristics due to greater bulk trap density.