Experimental investigation on the origin of direction dependence of Si (110) hole mobility utilizing ultra-thin body pMOSFETs

The direction dependence of hole mobility in (110) SOI pFETs has been systematically investigated for the first time utilizing a new device structure. It is newly found that the high hole mobility in Si (110)/<110> even at high electric field originates from not only the large subband energy difference but also lighter conductivity mass than Si (110)/<100> caused by quantum confinement.