Quantifying ESD/EOS latent damage and integrated circuit leakage currents

The correlation of IC leakage current with ESD/EOS latent damage is studied. Quantification of latent damage as a function of leakage current is determined for the two primary ESD/EOS latent damage mechanisms. This relationship explicitly shows the reduction in lifetime with ESD/EOS damage (type dependent) and also offers the possibility for a simple screening procedure for latent damage.