Intracavity-contacted VCSELs using asymmetric oxidation for high-speed optical interconnects

980 nm intracavity-contacted oxide-aperture vertical-cavity surface-emitting lasers (VCSELs) with high modulation bandwidth up to 11 GHz have been demonstrated. Asymmetric oxidation was used for reduction of parasitic capacitance and for relaxation of current crowding at oxide aperture rim. The modulation current efficiency factor (MCEF) of 5.6 GHz/mA
^1/2
was also achieved.