A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics

A new ECTT-DHPT with InGaAsP(λ=1.55μm) as base and InGaAsP(λ=1.3μm) as collector as well as waveguide was designed and fabricated, the DC characteristics reveal that the ECTT-DHPT can perform good optoelectronic mix operation and linear amplification operation by optically biased at two appropriate value respectively. Responsivity of more than 52A/W and dark current of 70nA (when V
_ce
=1V) were obtained.