Technique of making good electrical contacts to high resistivity (Cd,Mn) Te crystals

The authors believe that semiinsulating (Cd,Mn)Te crystals can successfully replace the commonly used (Cd,Zn)Te crystals as a material for manufacturing large-area X- and Gamma- ray detectors. Good quality, high-resistivity (10⁹ ÷ 10¹⁰ Ω·cm) crystals of (Cd,Mn)Te:V are grown by the Bridgeman method. Doping (≈1016 cm⁻³) with vanadium, which acts as a compensating dopant, and special annealing in cadmium vapours, which reduces the number of cadmium vacancies existing in the crystal after the growth, ensure high resistivity of the crystals.