Study of the radiation hardness of silicon sensors for the XFEL

Imaging experiments at the XFEL pose unprecedented requirements to the detectors in terms of radiation tolerance: Fluxes of up to 10
¹⁶
(12 keVphotons/cm
²
) corresponding to approximately 10
⁹
Gy in silicon, are expected. An irradiation station has been set up in the DORIS beam line F4, MOS test structures have been irradiated, and first results on the dose dependence of the C/V-characteristics, surface current density, and interface trap density have been obtained.