Molecular beam epitaxy-grown separate confinement buried heterostructure PbEuSeTe-PbTe diode lasers

Separate confinement buried heterostructure (SCBH) tunable PbEuSeTe-PbTe diode lasers were fabricated by molecular beam epitaxy for the first time. Continuous wave (CW) operating temperature of 215 K was realized, which is the highest CW operating temperature ever reported for lead-chalcogenide diode lasers. Preliminary results show a significant improvement in threshold current and emission power. Exceptionally low threshold currents of 2.5 mA at 120 K, 76 mA at 180 K, and 252 mA at 200 K were measured. The temperature tuning range of the SCBH diode laser spans between 6.49 μm at 20 K to 4.19 μm at 215 K.