Metamorphic MMICs for Operation Beyond 200 GHz

In this paper, we present the development of advanced millimeter-wave and submillimeter-wave monolithic integrated circuits for use in active and passive high-resolution imaging systems operating beyond 200 GHz. A 210 GHz subharmonically pumped dual-gate field-effect transistor (FET) mixer has been successfully realized using our 100 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Furthermore, a G-band low-noise amplifier MMIC demonstrating a linear gain of more than 16 dB between 180 and 220 GHz and a state-of-the-art noise figure of 4.8 dB was fabricated using a gate length of 50 nm. Finally, a submillimeter-wave monolithic integrated circuit (S-MMIC) could be realized based on an advanced 35 nm mHEMT technology, offering a small-signal gain of more than 15 dB between 270 and 310 GHz.