In-Situ and At-Speed Modeling and Characterization of Logic Interconnect Device Considering Front-End/Back-End Interaction

The paper presents a logic interconnect device (LED) to model digital circuit with near back-end-of-line (BEOL) effect, and to measure system performance. It is driven by a product inverter-based logic circuit, and it is loaded with near-BEOL wiring. The LID ring oscillator is measured and analyzed in 65 nm SOI CMOS. The methodology offers in-situ characterization of near-BEOL interconnect parasitics, and dielectric constant in product circuits. It captures front-end-of-line (FEOL) and near-BEOL interactions, distinguished in deeply scaled CMOS.