1.55 μm laser using InN-based quantum well heterostructure

The 1.55 μm semiconductor laser has recently been the subject of much research effort around the world. In this work a novel InN-based 1.55 μm quantum wll laser has been proposed. In order to reach the threshold current a very small voltage of 1.10 V is required. A very small threshold current of 7.3 mA is required to emit the light. The calculated values of threshold current and threshold voltage are lower than the reported values of the conventional 1.55 μm laser. The spectral range of the optical material gain is also found to be narrow which compensate to all optical losses. The above study indicates that the proposed InN-based 1.55 μm laser is very promising for the fabrication of future high performance laser.