Dielectric study of hafnium oxide thin film annealed in oxygen and deposited using RF sputtering system having MIM configuration

The dielectric study of HfO2 thin films deposited on the platinized silicon substrate using RF-sputtering deposition technique have been carried out in the metal-insulator-metal (MIM) configuration over a wide temperature (300 to 500 K) and frequency (100 Hz to 1 MHZ) ranges. The film were deposited at pre-optimized sputtering voltage of 0.8 kV, substrate bias of 80 volt and annealing temperature of 700°C in oxygen in order to get best results for the oxide charges and the leakage current as a MOS capacitor. The crystallographic structure of the deposited films were investigated using X-ray diffraction and the microstructure of the thin film is examined by SEM.