A numerical simulation study of a nanoscaled side selective buried oxide MOSFET

Two dimensional numerical simulation of nanoscaled selective buried oxide (SELBOX) based MOSFET is performed. In this device an opening is provided under the device channel in the buried oxide (BOX). A comparative analysis of the SELBOX, bulk and SOI (Silicon-on-Insulator) devices for various performance measuring parameters has been done. The simulation study has revealed that by properly choosing various device parameters, the overall performance of the SELBOX device is found to be optimal to that of the conventional MOSFET and SOI device, particularly when self heating, short channel effects and breakdown voltage are considered together.