Low-threshold 833-nm GaAsP-AlGaAs tensile-strained quantum-well laser diodes

We report the demonstration of TM polarized laser emission at 833 nm from GaAsP-AlGaAs quantum well laser structures grown on GaAs substrates by low-pressure organometallic vapor phase epitaxy for the first time. This is the longest wavelength near infrared TM polarized laser ever reported. Broad area laser diodes containing single GaAs/sub 0.95/P/sub 0.05/ quantum well lased at a low threshold current density of 280 A/cm
²
for a cavity length of 1 mm and with a high differential quantum efficiency of 32%/facet for cavity length less than 500 μm.