94 GHz Amplifier in SiGe Technology

A 94 GHz ampliffier fabricated in 0.25 μm SiGe BiCMOS technology and using a novel transmission line structure is presented. The circuit is a two-stage cascode topology utilizing transmission lines for input, output and inter-stage matching. The amplifier is designed for high gain, minimum noise figure and low power consumption. Measurements show a gain of 16.2 dB and a noise figure of 10.6 dB at 94 GHz. The power consumption is 61mW from a 3.5 Volt supply. The design-style with top-plate ground used in this amplifier is a good candidate for IC-designs at even higher frequencies in silicon-based technologies.