Power and thermal design criteria of AlGaN/GaN cascode cell for wideband distributed power amplifier

This paper deals with non-linear modeling of power GaN HEMT and design of power balanced cascode cell for wideband distributed power amplifiers. The active device is a 8times50 mum AlGaN/GaN HEMT grown on SiC substrate. The cascode die is flip-chipped onto an AlN substrate via electrical and mechanical bumps. This GaN-based cascode cell is dedicated to act as the unit power device within a broad-band capacitively-coupled 4-18 GHz distributed amplifier.