Co-integration of silicon nanodevices and NEMS for advanced information processing

In this paper we present our recent attempts at developing the advanced information processing devices by integrating nano-electro-mechanical (NEM) structures into conventional silicon nanodevices. Firstly, we show high-speed and nonvolatile NEM memory which features a mechanically-bistable floating gate is integrated onto MOSFETs. Secondly we discuss hybrid systems of single-electron transistors and NEM structures for exploring new switching principles.