Ion implantation technology and system for beyond 45nm node devices

Beyond 45nm node transistor device transition is reviewed and the compensation for Moor’s scaling law, next generation transistor structure and material will be changed. Accordingly, the ion implanter should be changed for the suitable production efficiency and new functions. The Medium Current ion implanter energy range was changed for the total low cost performance. The Low Energy ion implanter is appeared for miniaturization of the semiconductor devices. It will be developed for novel requirements of the devices.